Study on Simulation and Experiment of Y-Mo Co-Doped AgSnO2 Contact Materials

Due to the shortcomings of AgSnO2 as a contact material, models SnO2, Y-SnO2, Mo-SnO2, and Y-Mo-SnO2 were built calculate their electrical mechanical properties based on first principles density functional theory. The Y-Mo co-doped SnO2 was most stable all according enthalpy change impurity formation energy. By analyzing energy band structure states, it shown that doped are still direct bandgap semiconductor materials. valence moved up conduction down after doping, reducing gap enhancing conductivity. With reduced for carrier transition, performance improved best. completely by co-doping calculation results. materials prepared sol-gel method, powder metallurgy method. X-ray diffraction, hardness, conductivity wettability experiments undertaken, with experimental results showing can be comprehensively co-doping, verifying conclusions simulation. Overall, present study provides an effective method preparation high-performance